Formation of Cu diffusion channels in Ta layer of a Cu/Ta/SiO2/Si structure

Formation of Cu diffusion channels in Ta layer of a Cu/Ta/SiO2/Si structure

Three mechanisms for the formation of Cu diffusion channels in the Ta layer of a Cu/Ta/SiO2/Si structure are proposed. First, it is suggested that stacking faults formed during the recovery process induce localized regions of high internal energy in the Ta layer, from which Cu channels originate. Se...

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書目詳細資料
Main Authors:	Li, S., Dong, Zhili, Maung Latt, K., Park, H. S., White, Timothy John
其他作者:	School of Materials Science & Engineering
格式:	Article
語言:	English
出版:	2011
主題:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
在線閱讀:	https://hdl.handle.net/10356/97180 http://hdl.handle.net/10220/6894
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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