Behaviour of ionized metal plasma deposited Ta diffusion barrier between Cu and SiO2

Behaviour of ionized metal plasma deposited Ta diffusion barrier between Cu and SiO2

10.1023/A:1015230727381

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Bibliographic Details
Main Authors: Maung Latt, K., Park, H.S., Li, S., Rong, L., Osipowicz, T., Zhu, W.G., Lee, Y.K.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/113071
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/113071

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