Formation of Cu diffusion channels in Ta layer of a Cu/Ta/SiO2/Si structure

Three mechanisms for the formation of Cu diffusion channels in the Ta layer of a Cu/Ta/SiO2/Si structure are proposed. First, it is suggested that stacking faults formed during the recovery process induce localized regions of high internal energy in the Ta layer, from which Cu channels originate. Se...

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Main Authors:	Li, S., Dong, Zhili, Maung Latt, K., Park, H. S., White, Timothy John
Other Authors:	School of Materials Science & Engineering
Format:	Article
Language:	English
Published:	2011
Subjects:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Online Access:	https://hdl.handle.net/10356/97180 http://hdl.handle.net/10220/6894
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-97180
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spelling	sg-ntu-dr.10356-971802023-07-14T15:46:51Z Formation of Cu diffusion channels in Ta layer of a Cu/Ta/SiO2/Si structure Li, S. Dong, Zhili Maung Latt, K. Park, H. S. White, Timothy John School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials Three mechanisms for the formation of Cu diffusion channels in the Ta layer of a Cu/Ta/SiO2/Si structure are proposed. First, it is suggested that stacking faults formed during the recovery process induce localized regions of high internal energy in the Ta layer, from which Cu channels originate. Second, chemical reaction occurs at 800 °C and forms Ta4CuO11 across the Cu/Ta interface in Cu and Ta layers, which opens up channels for Cu diffusion. Third, triple junctions at the grain boundary of the Cu and Cu/Ta interface provide sites for the initiation of channel formation at 800 °C. At 950 °C, these channels in the diffusion barrier are absent, but Ta was oxidized into disordered Ta2O5 that may contain pathways for Cu diffusion. Published version 2011-07-13T07:10:20Z 2019-12-06T19:39:54Z 2011-07-13T07:10:20Z 2019-12-06T19:39:54Z 2002 2002 Journal Article Li, S., Dong, Z. L., Maung Latt, K., Park, H. S. & White, T. (2002). Formation of Cu diffusion channels in Ta layer of a Cu/Ta/SiO2/Si structure. Applied Physics Letters, 80(13), 2296-2298. https://hdl.handle.net/10356/97180 http://hdl.handle.net/10220/6894 10.1063/1.1465107 en Applied physics letters © 2002 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at: [DOI: http://dx.doi.org/10.1063/1.1465107]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
spellingShingle	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials Li, S. Dong, Zhili Maung Latt, K. Park, H. S. White, Timothy John Formation of Cu diffusion channels in Ta layer of a Cu/Ta/SiO2/Si structure
description	Three mechanisms for the formation of Cu diffusion channels in the Ta layer of a Cu/Ta/SiO2/Si structure are proposed. First, it is suggested that stacking faults formed during the recovery process induce localized regions of high internal energy in the Ta layer, from which Cu channels originate. Second, chemical reaction occurs at 800 °C and forms Ta4CuO11 across the Cu/Ta interface in Cu and Ta layers, which opens up channels for Cu diffusion. Third, triple junctions at the grain boundary of the Cu and Cu/Ta interface provide sites for the initiation of channel formation at 800 °C. At 950 °C, these channels in the diffusion barrier are absent, but Ta was oxidized into disordered Ta2O5 that may contain pathways for Cu diffusion.
author2	School of Materials Science & Engineering
author_facet	School of Materials Science & Engineering Li, S. Dong, Zhili Maung Latt, K. Park, H. S. White, Timothy John
format	Article
author	Li, S. Dong, Zhili Maung Latt, K. Park, H. S. White, Timothy John
author_sort	Li, S.
title	Formation of Cu diffusion channels in Ta layer of a Cu/Ta/SiO2/Si structure
title_short	Formation of Cu diffusion channels in Ta layer of a Cu/Ta/SiO2/Si structure
title_full	Formation of Cu diffusion channels in Ta layer of a Cu/Ta/SiO2/Si structure
title_fullStr	Formation of Cu diffusion channels in Ta layer of a Cu/Ta/SiO2/Si structure
title_full_unstemmed	Formation of Cu diffusion channels in Ta layer of a Cu/Ta/SiO2/Si structure
title_sort	formation of cu diffusion channels in ta layer of a cu/ta/sio2/si structure
publishDate	2011
url	https://hdl.handle.net/10356/97180 http://hdl.handle.net/10220/6894
_version_	1772825162163421184

Formation of Cu diffusion channels in Ta layer of a Cu/Ta/SiO2/Si structure

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