Effect of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si multi-layer structure

Effect of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si multi-layer structure

10.1016/S0921-5107(01)00746-2

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Bibliographic Details
Main Authors: Latt, K.M., Park, H.S., Seng, H.L., Osipowicz, T., Lee, Y.K., Li, S.
Other Authors: PHYSICS
Format: Article
Published: 2014
Subjects:
Diffusion barrier
Interfacial reaction
Ionized metal plasma
Metallization
Phase transformation
Tantalum
Online Access:http://scholarbank.nus.edu.sg/handle/10635/96343
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/96343

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