Effect of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si multi-layer structure

10.1016/S0921-5107(01)00746-2

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Main Authors:	Latt, K.M., Park, H.S., Seng, H.L., Osipowicz, T., Lee, Y.K., Li, S.
Other Authors:	PHYSICS
Format:	Article
Published:	2014
Subjects:	Diffusion barrier Interfacial reaction Ionized metal plasma Metallization Phase transformation Tantalum
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/96343
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-96343
record_format	dspace
spelling	sg-nus-scholar.10635-963432024-11-12T02:04:37Z Effect of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si multi-layer structure Latt, K.M. Park, H.S. Seng, H.L. Osipowicz, T. Lee, Y.K. Li, S. PHYSICS Diffusion barrier Interfacial reaction Ionized metal plasma Metallization Phase transformation Tantalum 10.1016/S0921-5107(01)00746-2 Materials Science and Engineering B: Solid-State Materials for Advanced Technology 90 1-2 25-33 MSBTE 2014-10-16T09:22:20Z 2014-10-16T09:22:20Z 2002-03-07 Article Latt, K.M., Park, H.S., Seng, H.L., Osipowicz, T., Lee, Y.K., Li, S. (2002-03-07). Effect of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si multi-layer structure. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 90 (1-2) : 25-33. ScholarBank@NUS Repository. https://doi.org/10.1016/S0921-5107(01)00746-2 09215107 http://scholarbank.nus.edu.sg/handle/10635/96343 000174019500006 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Diffusion barrier Interfacial reaction Ionized metal plasma Metallization Phase transformation Tantalum
spellingShingle	Diffusion barrier Interfacial reaction Ionized metal plasma Metallization Phase transformation Tantalum Latt, K.M. Park, H.S. Seng, H.L. Osipowicz, T. Lee, Y.K. Li, S. Effect of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si multi-layer structure
description	10.1016/S0921-5107(01)00746-2
author2	PHYSICS
author_facet	PHYSICS Latt, K.M. Park, H.S. Seng, H.L. Osipowicz, T. Lee, Y.K. Li, S.
format	Article
author	Latt, K.M. Park, H.S. Seng, H.L. Osipowicz, T. Lee, Y.K. Li, S.
author_sort	Latt, K.M.
title	Effect of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si multi-layer structure
title_short	Effect of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si multi-layer structure
title_full	Effect of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si multi-layer structure
title_fullStr	Effect of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si multi-layer structure
title_full_unstemmed	Effect of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si multi-layer structure
title_sort	effect of the silicon nitride passivation layer on the cu/ta/sio2/si multi-layer structure
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/96343
_version_	1821230049633763328

Effect of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si multi-layer structure

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