Effect of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si multi-layer structure

• Main Authors: Latt, K.M., Park, H.S., Seng, H.L., Osipowicz, T., Lee, Y.K., Li, S.
• 其他作者: PHYSICS
• 格式: Article
• 出版: 2014
• 主題: Diffusion barrier; Interfacial reaction; Ionized metal plasma; Metallization; Phase transformation; Tantalum
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/96343
• 機構: National University of Singapore

10.1016/S0921-5107(01)00746-2