Effect of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si multi-layer structure

Effect of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si multi-layer structure

10.1016/S0921-5107(01)00746-2

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書目詳細資料
Main Authors:	Latt, K.M., Park, H.S., Seng, H.L., Osipowicz, T., Lee, Y.K., Li, S.
其他作者:	PHYSICS
格式:	Article
出版:	2014
主題:	Diffusion barrier Interfacial reaction Ionized metal plasma Metallization Phase transformation Tantalum
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/96343
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

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