Study of copper diffusion into Ta and TaN barrier materials for MOS devices

Study of copper diffusion into Ta and TaN barrier materials for MOS devices

10.1016/j.tsf.2004.05.102

Saved in:
Bibliographic Details
Main Authors: Loh, S.W., Zhang, D.H., Li, C.Y., Liu, R., Wee, A.T.S.
Other Authors: INSTITUTE OF ENGINEERING SCIENCE
Format: Article
Published: 2014
Subjects:
Barrier
Copper
Diffusion
Diffusion coefficient
Online Access:http://scholarbank.nus.edu.sg/handle/10635/115302
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/115302

Similar Items