Study of copper diffusion into Ta and TaN barrier materials for MOS devices

• Main Authors: Loh, S.W., Zhang, D.H., Li, C.Y., Liu, R., Wee, A.T.S.
• Other Authors: INSTITUTE OF ENGINEERING SCIENCE
• Format: Article
• Published: 2014
• Subjects: Barrier; Copper; Diffusion; Diffusion coefficient
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/115302
• Institution: National University of Singapore

10.1016/j.tsf.2004.05.102