An experimental study of lateral charge transfer in silicon nanocrystal layer embedded in SiO2 thin film

• المؤلفون الرئيسيون: Wong, J. I., Chen, T. P., Tay, Y. Y., Liu, P., Yang, M., Liu, Z., Yang, H. Y.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2015
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/103957; http://hdl.handle.net/10220/24654
• المؤسسة: Nanyang Technological University

Lateral charge transfer in a Si nanocrystal (nc-Si) layer embedded in a SiO2 thin film synthesized by Si ion implantation is investigated. When the nc-Si in one metal-oxide-semiconductor device is charged, the charging effect on both the charged device itself and the neighboring devices is monitored...