Optical and electrical applications of ZnSxSe1−x nanowires-network with uniform and controllable stoichiometry

• Main Authors: Lu, Junpeng, Liu, Hongwei, Sun, Cheng, Zheng, Minrui, Nripan, Mathews, Chen, Gin Seng, Subodh Gautam Mhaisalkar, Zhang, Xinhai, Sow, Chorng Haur
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2013
• Online Access: https://hdl.handle.net/10356/97245; http://hdl.handle.net/10220/10698
• Institution: Nanyang Technological University

Single crystalline ternary ZnSxSe1−x nanowires with uniform chemical stoichiometry and accurately controllable compositions (0≤ x ≤ 1) were synthesized through a simple and yet effective one-step approach with a specially designed modification. Energy-gap-tuning via compositional change was achieved for a direct band gap from 2.6 to 3.6 eV. Raman spectroscopy studies revealed typical two-mode behavior indicative of high miscibility in the alloyed compound. Moreover, the enhanced electrical-conductivity and gating effect behavior after the formation of ternary alloy enable their application in nano/micro-field effect transistor devices. In addition, the slow recombination rate in the photo-response process indicates their potential for photoelectric applications.