Spontaneous growth and phase transformation of highly conductive nickel germanide nanowires

We report the synthesis, phase transformation, and electrical property measurement of single-crystal NiGe and ε-Ni5Ge3 nanowires (NWs). NiGe NWs were spontaneously synthesized by chemical vapor deposition of GeH4 onto a porous Ni substrate without the use of intentional catalysts. The as-grown NWs o...

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Bibliographic Details
Main Authors: Higgins, Jeremy M., Faber, Matthew S., Yan, Chaoyi, Lee, Pooi See, Jin, Song
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/97270
http://hdl.handle.net/10220/10448
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Institution: Nanyang Technological University
Language: English
Description
Summary:We report the synthesis, phase transformation, and electrical property measurement of single-crystal NiGe and ε-Ni5Ge3 nanowires (NWs). NiGe NWs were spontaneously synthesized by chemical vapor deposition of GeH4 onto a porous Ni substrate without the use of intentional catalysts. The as-grown NWs of the orthorhombic NiGe phase were transformed to the hexagonal ε-Ni5Ge3 phase by thermal annealing induced Ni enrichment. This controllable conversion of germanide phases is desirable for phase-dependent property study and applications, and the observation of novel metastable ε-Ni5Ge3 phase suggests the importance of kinetic factors in such nanophase transformations. Electrical studies reveal that NiGe NWs are highly conductive, with an average resistivity of 35 ± 15 μΩ·cm, while the resistivity of ε-Ni5Ge3 NWs is more than 4 times that of the NiGe phase. NWs of nickel germanides, particularly NiGe, would be useful building blocks for germanium-based nanoelectronic devices.