Spontaneous growth and phase transformation of highly conductive nickel germanide nanowires
We report the synthesis, phase transformation, and electrical property measurement of single-crystal NiGe and ε-Ni5Ge3 nanowires (NWs). NiGe NWs were spontaneously synthesized by chemical vapor deposition of GeH4 onto a porous Ni substrate without the use of intentional catalysts. The as-grown NWs o...
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| Main Authors: | , , , , |
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| 其他作者: | |
| 格式: | Article |
| 語言: | English |
| 出版: |
2013
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| 在線閱讀: | https://hdl.handle.net/10356/97270 http://hdl.handle.net/10220/10448 |
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| 機構: | Nanyang Technological University |
| 語言: | English |
| 總結: | We report the synthesis, phase transformation, and electrical property measurement of single-crystal NiGe and ε-Ni5Ge3 nanowires (NWs). NiGe NWs were spontaneously synthesized by chemical vapor deposition of GeH4 onto a porous Ni substrate without the use of intentional catalysts. The as-grown NWs of the orthorhombic NiGe phase were transformed to the hexagonal ε-Ni5Ge3 phase by thermal annealing induced Ni enrichment. This controllable conversion of germanide phases is desirable for phase-dependent property study and applications, and the observation of novel metastable ε-Ni5Ge3 phase suggests the importance of kinetic factors in such nanophase transformations. Electrical studies reveal that NiGe NWs are highly conductive, with an average resistivity of 35 ± 15 μΩ·cm, while the resistivity of ε-Ni5Ge3 NWs is more than 4 times that of the NiGe phase. NWs of nickel germanides, particularly NiGe, would be useful building blocks for germanium-based nanoelectronic devices. |
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