Enhanced charge storage capability of Ge/GeO2 core/shell nanostructure
A Ge/GeO2 core/shell nanostructure embedded in an Al2O3 gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal–insulator–semiconductor (MIS) capacitor for Ge/GeO2 core/shell nanoparticles compared to Ge nanoparticles only, which is...
Saved in:
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
|
| Online Access: | https://hdl.handle.net/10356/97279 http://hdl.handle.net/10220/10538 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |
| id |
sg-ntu-dr.10356-97279 |
|---|---|
| record_format |
dspace |
| spelling |
sg-ntu-dr.10356-972792020-06-01T10:01:58Z Enhanced charge storage capability of Ge/GeO2 core/shell nanostructure Yuan, C. L. Lee, Pooi See School of Materials Science & Engineering A Ge/GeO2 core/shell nanostructure embedded in an Al2O3 gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal–insulator–semiconductor (MIS) capacitor for Ge/GeO2 core/shell nanoparticles compared to Ge nanoparticles only, which is due to the high percentage of defects located on the surface and grain boundaries of the GeO2 shell. We believe that the findings presented here provide physical insight and offer useful guidelines to controllably modify the charge storage properties of indirect semiconductors through defect engineering. 2013-06-24T07:06:41Z 2019-12-06T19:40:51Z 2013-06-24T07:06:41Z 2019-12-06T19:40:51Z 2008 2008 Journal Article Yuan, C. L., & Lee, P. S. (2008). Enhanced charge storage capability of Ge/GeO2 core/shell nanostructure. Nanotechnology, 19(35). 0957-4484 https://hdl.handle.net/10356/97279 http://hdl.handle.net/10220/10538 10.1088/0957-4484/19/35/355206 en Nanotechnology © 2008 IOP Publishing Ltd. |
| institution |
Nanyang Technological University |
| building |
NTU Library |
| country |
Singapore |
| collection |
DR-NTU |
| language |
English |
| description |
A Ge/GeO2 core/shell nanostructure embedded in an Al2O3 gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal–insulator–semiconductor (MIS) capacitor for Ge/GeO2 core/shell nanoparticles compared to Ge nanoparticles only, which is due to the high percentage of defects located on the surface and grain boundaries of the GeO2 shell. We believe that the findings presented here provide physical insight and offer useful guidelines to controllably modify the charge storage properties of indirect semiconductors through defect engineering. |
| author2 |
School of Materials Science & Engineering |
| author_facet |
School of Materials Science & Engineering Yuan, C. L. Lee, Pooi See |
| format |
Article |
| author |
Yuan, C. L. Lee, Pooi See |
| spellingShingle |
Yuan, C. L. Lee, Pooi See Enhanced charge storage capability of Ge/GeO2 core/shell nanostructure |
| author_sort |
Yuan, C. L. |
| title |
Enhanced charge storage capability of Ge/GeO2 core/shell nanostructure |
| title_short |
Enhanced charge storage capability of Ge/GeO2 core/shell nanostructure |
| title_full |
Enhanced charge storage capability of Ge/GeO2 core/shell nanostructure |
| title_fullStr |
Enhanced charge storage capability of Ge/GeO2 core/shell nanostructure |
| title_full_unstemmed |
Enhanced charge storage capability of Ge/GeO2 core/shell nanostructure |
| title_sort |
enhanced charge storage capability of ge/geo2 core/shell nanostructure |
| publishDate |
2013 |
| url |
https://hdl.handle.net/10356/97279 http://hdl.handle.net/10220/10538 |
| _version_ |
1681057903332556800 |