Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

InGaN/GaN light-emitting diodes (LEDs) with graded-thickness quantum barriers (GTQB) are designed and grown by metal-organic chemical-vapor deposition. The proposed GTQB structure, in which the barrier thickness decreases from the n-GaN to p-GaN side, was found to lead to an improved uniformity in t...

Full description

Saved in:
Bibliographic Details
Main Authors: Ji, Y., Kyaw, Z. B., Lu, S. P., Zhang, Y. P., Zhu, B. B., Ju, Zhengang, Liu, Wei, Zhang, Zi-Hui, Tan, Swee Tiam, Zhang, Xueliang, Namig, Hasanov, Sun, Xiaowei, Demir, Hilmi Volkan
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/97309
http://hdl.handle.net/10220/11837
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
Description
Summary:InGaN/GaN light-emitting diodes (LEDs) with graded-thickness quantum barriers (GTQB) are designed and grown by metal-organic chemical-vapor deposition. The proposed GTQB structure, in which the barrier thickness decreases from the n-GaN to p-GaN side, was found to lead to an improved uniformity in the hole distribution and thus, radiative recombination rates across the active region. Consequently, the efficiency droop was reduced to 28.4% at a current density of 70 A/cm2, which is much smaller than that of the conventional equal-thickness quantum barriers (ETQB) LED, which is 48.3%. Moreover, the light output power was enhanced from 770 mW for the ETQB LEDs to 870 mW for the GTQB LEDs at 70 A/cm2. © 2013 AIP Publishing LLC.

Similar Items