Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

• Main Authors: Ji, Y., Kyaw, Z. B., Lu, S. P., Zhang, Y. P., Zhu, B. B., Ju, Zhengang, Liu, Wei, Zhang, Zi-Hui, Tan, Swee Tiam, Zhang, Xueliang, Namig, Hasanov, Sun, Xiaowei, Demir, Hilmi Volkan
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2013
• Online Access: https://hdl.handle.net/10356/97309; http://hdl.handle.net/10220/11837
• Institution: Nanyang Technological University

InGaN/GaN light-emitting diodes (LEDs) with graded-thickness quantum barriers (GTQB) are designed and grown by metal-organic chemical-vapor deposition. The proposed GTQB structure, in which the barrier thickness decreases from the n-GaN to p-GaN side, was found to lead to an improved uniformity in the hole distribution and thus, radiative recombination rates across the active region. Consequently, the efficiency droop was reduced to 28.4% at a current density of 70 A/cm2, which is much smaller than that of the conventional equal-thickness quantum barriers (ETQB) LED, which is 48.3%. Moreover, the light output power was enhanced from 770 mW for the ETQB LEDs to 870 mW for the GTQB LEDs at 70 A/cm2. © 2013 AIP Publishing LLC.