Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor

Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor

Using electrostatic force microscopy, we show direct evidence of charge injection at the carbon nanotube–SiO2 interface leading to the appearance of hysteresis. The dynamic screening effect of the injected charges is revealed step by step. Further temperature dependent tests also demonstrate the eff...

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Main Authors: Ong, Hock Guan, Cheah, Jun Wei, Zou, X., Li, B., Cao, X. H., Tantang, Hosea, Li, L.-J., Zhang, Hua, Han, G. C., Wang, J.
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/97319
http://hdl.handle.net/10220/10541
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-973192020-06-01T10:21:14Z Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor Ong, Hock Guan Cheah, Jun Wei Zou, X. Li, B. Cao, X. H. Tantang, Hosea Li, L.-J. Zhang, Hua Han, G. C. Wang, J. School of Materials Science & Engineering Using electrostatic force microscopy, we show direct evidence of charge injection at the carbon nanotube–SiO2 interface leading to the appearance of hysteresis. The dynamic screening effect of the injected charges is revealed step by step. Further temperature dependent tests also demonstrate the effect of SiO2 surface chemistry. Furthermore, we conclude that it is not practical to use such a device for memory application because of data retention and storage density issues. 2013-06-24T07:18:34Z 2019-12-06T19:41:26Z 2013-06-24T07:18:34Z 2019-12-06T19:41:26Z 2011 2011 Journal Article Ong, H. G., Cheah, J. W., Zou, X., Li, B., Cao, X. H., Tantang, H., et al. (2011). Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor. Journal of physics D : applied physics, 44(28). 0022-3727 https://hdl.handle.net/10356/97319 http://hdl.handle.net/10220/10541 10.1088/0022-3727/44/28/285301 en Journal of physics D: applied physics © 2011 IOP Publishing Ltd.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
description Using electrostatic force microscopy, we show direct evidence of charge injection at the carbon nanotube–SiO2 interface leading to the appearance of hysteresis. The dynamic screening effect of the injected charges is revealed step by step. Further temperature dependent tests also demonstrate the effect of SiO2 surface chemistry. Furthermore, we conclude that it is not practical to use such a device for memory application because of data retention and storage density issues.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Ong, Hock Guan
Cheah, Jun Wei
Zou, X.
Li, B.
Cao, X. H.
Tantang, Hosea
Li, L.-J.
Zhang, Hua
Han, G. C.
Wang, J.
format Article
author Ong, Hock Guan
Cheah, Jun Wei
Zou, X.
Li, B.
Cao, X. H.
Tantang, Hosea
Li, L.-J.
Zhang, Hua
Han, G. C.
Wang, J.
spellingShingle Ong, Hock Guan
Cheah, Jun Wei
Zou, X.
Li, B.
Cao, X. H.
Tantang, Hosea
Li, L.-J.
Zhang, Hua
Han, G. C.
Wang, J.
Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor
author_sort Ong, Hock Guan
title Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor
title_short Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor
title_full Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor
title_fullStr Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor
title_full_unstemmed Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor
title_sort origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor
publishDate 2013
url https://hdl.handle.net/10356/97319
http://hdl.handle.net/10220/10541
_version_ 1681059312048275456

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