In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400°C

• المؤلفون الرئيسيون: Mangelinck, D., Chan, L., Lee, Pooi See, Pey, Kin Leong, Ding, Jun
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/97334; http://hdl.handle.net/10220/10506
• المؤسسة: Nanyang Technological University

The key feature of this paper is to highlight the use of an in situ XRD technique to the study of the initial reaction of Ni(Pt) on Si(100) isothermally. The concentration of Ni and Pt as a function of time in the low temperature range of less than 400 °C was evaluated. The XRD results show that the...