A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by pulsed laser ablation

• المؤلفون الرئيسيون: Yuan, C. L., Darmawan, P., Setiawan, Y., Lee, Pooi See
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Materials::Nanostructured materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/97343; http://hdl.handle.net/10220/10483

We have successfully developed a novel method to fabricate the memory structure of Ge nanocrystals embedded in amorphous Lu2O3 high-k dielectric using pulsed laser ablation. The mean size and aerial density of the Ge nanocrystals are estimated to be about 9 nm and 7 × 1011 cm−2, respectively. Good p...