Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device
We have successfully developed a method based on pulsed laser deposition (PLD) to produce SiO2 nanocrystals embedded in Lu2O3 high-k dielectric. The mean size and aerial density of the SiO2 nanocrystals embedded in Lu2O3 are estimated to be about 7 nm and 6 × 1011cm−2, respectively. This metal–oxide...
Saved in:
| Main Authors: | , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
|
| Online Access: | https://hdl.handle.net/10356/97344 http://hdl.handle.net/10220/10537 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |
| id |
sg-ntu-dr.10356-97344 |
|---|---|
| record_format |
dspace |
| spelling |
sg-ntu-dr.10356-973442020-06-01T10:13:36Z Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device Yuan, C. L. Darmawan, P. Setiawan, Y. Lee, Pooi See School of Materials Science & Engineering We have successfully developed a method based on pulsed laser deposition (PLD) to produce SiO2 nanocrystals embedded in Lu2O3 high-k dielectric. The mean size and aerial density of the SiO2 nanocrystals embedded in Lu2O3 are estimated to be about 7 nm and 6 × 1011cm−2, respectively. This metal–oxide–semiconductor capacitor can be operated under smaller operation voltages, and exhibits a large memory window with a good retention time. 2013-06-24T07:04:01Z 2019-12-06T19:41:41Z 2013-06-24T07:04:01Z 2019-12-06T19:41:41Z 2006 2006 Journal Article Yuan, C. L., Darmawan, P., Setiawan, Y., & Lee, P. S. (2006). Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device. Nanotechnology, 17(13), 3175-3177. 0957-4484 https://hdl.handle.net/10356/97344 http://hdl.handle.net/10220/10537 10.1088/0957-4484/17/13/016 en Nanotechnology © 2006 IOP Publishing Ltd. |
| institution |
Nanyang Technological University |
| building |
NTU Library |
| country |
Singapore |
| collection |
DR-NTU |
| language |
English |
| description |
We have successfully developed a method based on pulsed laser deposition (PLD) to produce SiO2 nanocrystals embedded in Lu2O3 high-k dielectric. The mean size and aerial density of the SiO2 nanocrystals embedded in Lu2O3 are estimated to be about 7 nm and 6 × 1011cm−2, respectively. This metal–oxide–semiconductor capacitor can be operated under smaller operation voltages, and exhibits a large memory window with a good retention time. |
| author2 |
School of Materials Science & Engineering |
| author_facet |
School of Materials Science & Engineering Yuan, C. L. Darmawan, P. Setiawan, Y. Lee, Pooi See |
| format |
Article |
| author |
Yuan, C. L. Darmawan, P. Setiawan, Y. Lee, Pooi See |
| spellingShingle |
Yuan, C. L. Darmawan, P. Setiawan, Y. Lee, Pooi See Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device |
| author_sort |
Yuan, C. L. |
| title |
Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device |
| title_short |
Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device |
| title_full |
Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device |
| title_fullStr |
Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device |
| title_full_unstemmed |
Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device |
| title_sort |
formation of sio2 nanocrystals in lu2o3 high-k dielectric by pulsed laser ablation and application in memory device |
| publishDate |
2013 |
| url |
https://hdl.handle.net/10356/97344 http://hdl.handle.net/10220/10537 |
| _version_ |
1681058840233115648 |