Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device

• Main Authors: Yuan, C. L., Darmawan, P., Setiawan, Y., Lee, Pooi See
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2013
• Online Access: https://hdl.handle.net/10356/97344; http://hdl.handle.net/10220/10537
• Institution: Nanyang Technological University

We have successfully developed a method based on pulsed laser deposition (PLD) to produce SiO2 nanocrystals embedded in Lu2O3 high-k dielectric. The mean size and aerial density of the SiO2 nanocrystals embedded in Lu2O3 are estimated to be about 7 nm and 6 × 1011cm−2, respectively. This metal–oxide...