Correlation between the band gap, elastic modulus, Raman shift and melting point of CdS, ZnS, and CdSe semiconductors and their size dependency

With structural miniaturization down to the nanoscale, the detectable quantities of solid materials no longer remain constant but become tunable. For the II–VI semiconductors example, the band gap expands, the elastic modulus increases, the melting point drops, and the Raman optical phonons experien...

Full description

Saved in:
Bibliographic Details
Main Authors: Zhou, Zhaofeng, Sun, Changqing, Yang, C., Li, J. W., Yang, X. X., Qin, W., Jiang, R., Guo, N. G., Wang, Y.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/97370
http://hdl.handle.net/10220/10745
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-97370
record_format dspace
spelling sg-ntu-dr.10356-973702020-03-07T14:02:47Z Correlation between the band gap, elastic modulus, Raman shift and melting point of CdS, ZnS, and CdSe semiconductors and their size dependency Zhou, Zhaofeng Sun, Changqing Yang, C. Li, J. W. Yang, X. X. Qin, W. Jiang, R. Guo, N. G. Wang, Y. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering With structural miniaturization down to the nanoscale, the detectable quantities of solid materials no longer remain constant but become tunable. For the II–VI semiconductors example, the band gap expands, the elastic modulus increases, the melting point drops, and the Raman optical phonons experience red shift associated with creation of low frequency Raman acoustic modes that undergo blue shift with decreasing the dimensional scale. In order to understand the common origin of the size dependency of these seemingly irrelevant properties, we formulated these quantities for CdS, ZnS, and CdSe semiconductors from the perspectives of bond order–length–strength correlation and the local bond averaging approach. Consistency between the theory predictions and the measured size dependence of these quantities clarified that the undercoordination-induced local strain and quantum entrapment and the varied fraction of undercoordinated atoms of the entire solid correlate these quantities and dominate their size effect. 2013-06-27T01:24:06Z 2019-12-06T19:41:56Z 2013-06-27T01:24:06Z 2019-12-06T19:41:56Z 2012 2012 Journal Article Yang, C., Zhou, Z. F., Li, J. W., Yang, X. X., Qin, W., Jiang, R., et al. (2012). Correlation between the band gap, elastic modulus, Raman shift and melting point of CdS, ZnS, and CdSe semiconductors and their size dependency. Nanoscale, 4(4), 1304-1307. 2040-3364 https://hdl.handle.net/10356/97370 http://hdl.handle.net/10220/10745 10.1039/c2nr11605g en Nanoscale © 2012 The Royal Society of Chemistry.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Zhou, Zhaofeng
Sun, Changqing
Yang, C.
Li, J. W.
Yang, X. X.
Qin, W.
Jiang, R.
Guo, N. G.
Wang, Y.
Correlation between the band gap, elastic modulus, Raman shift and melting point of CdS, ZnS, and CdSe semiconductors and their size dependency
description With structural miniaturization down to the nanoscale, the detectable quantities of solid materials no longer remain constant but become tunable. For the II–VI semiconductors example, the band gap expands, the elastic modulus increases, the melting point drops, and the Raman optical phonons experience red shift associated with creation of low frequency Raman acoustic modes that undergo blue shift with decreasing the dimensional scale. In order to understand the common origin of the size dependency of these seemingly irrelevant properties, we formulated these quantities for CdS, ZnS, and CdSe semiconductors from the perspectives of bond order–length–strength correlation and the local bond averaging approach. Consistency between the theory predictions and the measured size dependence of these quantities clarified that the undercoordination-induced local strain and quantum entrapment and the varied fraction of undercoordinated atoms of the entire solid correlate these quantities and dominate their size effect.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Zhou, Zhaofeng
Sun, Changqing
Yang, C.
Li, J. W.
Yang, X. X.
Qin, W.
Jiang, R.
Guo, N. G.
Wang, Y.
format Article
author Zhou, Zhaofeng
Sun, Changqing
Yang, C.
Li, J. W.
Yang, X. X.
Qin, W.
Jiang, R.
Guo, N. G.
Wang, Y.
author_sort Zhou, Zhaofeng
title Correlation between the band gap, elastic modulus, Raman shift and melting point of CdS, ZnS, and CdSe semiconductors and their size dependency
title_short Correlation between the band gap, elastic modulus, Raman shift and melting point of CdS, ZnS, and CdSe semiconductors and their size dependency
title_full Correlation between the band gap, elastic modulus, Raman shift and melting point of CdS, ZnS, and CdSe semiconductors and their size dependency
title_fullStr Correlation between the band gap, elastic modulus, Raman shift and melting point of CdS, ZnS, and CdSe semiconductors and their size dependency
title_full_unstemmed Correlation between the band gap, elastic modulus, Raman shift and melting point of CdS, ZnS, and CdSe semiconductors and their size dependency
title_sort correlation between the band gap, elastic modulus, raman shift and melting point of cds, zns, and cdse semiconductors and their size dependency
publishDate 2013
url https://hdl.handle.net/10356/97370
http://hdl.handle.net/10220/10745
_version_ 1681046199678795776