Correlation between the band gap, elastic modulus, Raman shift and melting point of CdS, ZnS, and CdSe semiconductors and their size dependency

• Main Authors: Zhou, Zhaofeng, Sun, Changqing, Yang, C., Li, J. W., Yang, X. X., Qin, W., Jiang, R., Guo, N. G., Wang, Y.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/97370; http://hdl.handle.net/10220/10745
• Institution: Nanyang Technological University

With structural miniaturization down to the nanoscale, the detectable quantities of solid materials no longer remain constant but become tunable. For the II–VI semiconductors example, the band gap expands, the elastic modulus increases, the melting point drops, and the Raman optical phonons experien...