PN-type quantum barrier for InGaN/GaN light emitting diodes

PN-type quantum barrier for InGaN/GaN light emitting diodes

In this work, InGaN/GaN light-emitting diodes (LEDs) with PN-type quantum barriers are comparatively studied both theoretically and experimentally. A strong enhancement in the optical output power is obtained from the proposed device. The improved performance is attributed to the screening of the qu...

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Bibliographic Details
Main Authors: Zhang, Zi-Hui, Tan, Swee Tiam, Ji, Yun, Liu, Wei, Ju, Zhengang, Kyaw, Zabu, Sun, Xiaowei, Demir, Hilmi Volkan
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/98017
http://hdl.handle.net/10220/12228
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/98017
http://hdl.handle.net/10220/12228

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