PN-type quantum barrier for InGaN/GaN light emitting diodes

• Main Authors: Zhang, Zi-Hui, Tan, Swee Tiam, Ji, Yun, Liu, Wei, Ju, Zhengang, Kyaw, Zabu, Sun, Xiaowei, Demir, Hilmi Volkan
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Online Access: https://hdl.handle.net/10356/98017; http://hdl.handle.net/10220/12228
• Institution: Nanyang Technological University

In this work, InGaN/GaN light-emitting diodes (LEDs) with PN-type quantum barriers are comparatively studied both theoretically and experimentally. A strong enhancement in the optical output power is obtained from the proposed device. The improved performance is attributed to the screening of the qu...