PN-type quantum barrier for InGaN/GaN light emitting diodes
In this work, InGaN/GaN light-emitting diodes (LEDs) with PN-type quantum barriers are comparatively studied both theoretically and experimentally. A strong enhancement in the optical output power is obtained from the proposed device. The improved performance is attributed to the screening of the qu...
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| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/98017 http://hdl.handle.net/10220/12228 |
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| Institution: | Nanyang Technological University |
| Language: | English |