Design of an electronic synapse with spike time dependent plasticity based on resistive memory device

• Main Authors: Hu, S. G., Wu, H. T., Liu, Y., Liu, Z., Yu, Q., Yin, Y., Chen, Tupei, Hosaka, Sumio
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/98141; http://hdl.handle.net/10220/13303
• Institution: Nanyang Technological University

This paper presents a design of electronic synapse with Spike Time Dependent Plasticity (STDP) based on resistive memory device. With the resistive memory device whose resistance can be purposely changed, the weight of the synaptic connection between two neurons can be modified. The synapse can work...