Design of low power 3D hybrid memory by non-volatile CBRAM-crossbar with block-level data-retention

As one of the newly introduced resistive random access memory (ReRAM) devices, this paper has shown an in-depth study of conductive-bridging random access memory (CBRAM) for non-volatile memory (NVM) computing. Firstly, a CBRAM-crossbar based memory is evaluated with accurate physical-level model an...

全面介紹

Saved in:
書目詳細資料
Main Authors: Wang, Yuhao, Zhang, Chun, Yu, Hao, Zhang, Wei
其他作者: School of Computer Engineering
格式: Conference or Workshop Item
語言:English
出版: 2013
在線閱讀:https://hdl.handle.net/10356/98317
http://hdl.handle.net/10220/12366
標簽: 添加標簽
沒有標簽, 成為第一個標記此記錄!