Impact ionization and auger recombination rates in semiconductor quantum dots

• Main Authors: Fu, Ying, Zhou, Y. H., Su, Haibin, Boey, Freddy Yin Chiang, Ågren, Hans
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2011
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
• Online Access: https://hdl.handle.net/10356/98411; http://hdl.handle.net/10220/7429
• Institution: Nanyang Technological University

Impact ionization and Auger recombination in nanoscale spherical quantum dots (QDs) have been studied theoretically. It is shown that due to the strong quantum confinement of both electrons in the conduction band and holes in the valence band, impact ionization and Auger recombination energies in th...