Review on VCO based ADC in modern deep submicron CMOS technology

The continuous scaling in CMOS technology has driven researchers to look for new ADC architecture that can work well in lower supply voltage and smaller device dimension. VCO-based ADCs have emerged as an attractive solution due to its highly digital intensive circuit architecture, inherent noise sh...

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Main Authors: Hor, Hon Cheong, Siek, Liter
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/98711
http://hdl.handle.net/10220/12682
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-987112020-03-07T13:24:48Z Review on VCO based ADC in modern deep submicron CMOS technology Hor, Hon Cheong Siek, Liter School of Electrical and Electronic Engineering IEEE International Symposium on Radio-Frequency Integration Technology (2012 : Singapore) DRNTU::Engineering::Electrical and electronic engineering The continuous scaling in CMOS technology has driven researchers to look for new ADC architecture that can work well in lower supply voltage and smaller device dimension. VCO-based ADCs have emerged as an attractive solution due to its highly digital intensive circuit architecture, inherent noise shaping characteristic, as well as anti-aliasing property. However, the nonlinear behavior of VCO's voltage-to-frequency characteristic has severe limitation on the performance of VCO-based ADC. This paper presents recent development in VCO-based ADC with different VCO nonlinearity suppression techniques. The advantage and disadvantage of each of these techniques will be reviewed. 2013-08-01T01:18:00Z 2019-12-06T19:58:44Z 2013-08-01T01:18:00Z 2019-12-06T19:58:44Z 2012 2012 Conference Paper Hor, H. C.,& Siek, L. (2012). Review on VCO based ADC in modern deep submicron CMOS technology. 2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 86-88. https://hdl.handle.net/10356/98711 http://hdl.handle.net/10220/12682 10.1109/RFIT.2012.6401622 en
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Hor, Hon Cheong
Siek, Liter
Review on VCO based ADC in modern deep submicron CMOS technology
description The continuous scaling in CMOS technology has driven researchers to look for new ADC architecture that can work well in lower supply voltage and smaller device dimension. VCO-based ADCs have emerged as an attractive solution due to its highly digital intensive circuit architecture, inherent noise shaping characteristic, as well as anti-aliasing property. However, the nonlinear behavior of VCO's voltage-to-frequency characteristic has severe limitation on the performance of VCO-based ADC. This paper presents recent development in VCO-based ADC with different VCO nonlinearity suppression techniques. The advantage and disadvantage of each of these techniques will be reviewed.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Hor, Hon Cheong
Siek, Liter
format Conference or Workshop Item
author Hor, Hon Cheong
Siek, Liter
author_sort Hor, Hon Cheong
title Review on VCO based ADC in modern deep submicron CMOS technology
title_short Review on VCO based ADC in modern deep submicron CMOS technology
title_full Review on VCO based ADC in modern deep submicron CMOS technology
title_fullStr Review on VCO based ADC in modern deep submicron CMOS technology
title_full_unstemmed Review on VCO based ADC in modern deep submicron CMOS technology
title_sort review on vco based adc in modern deep submicron cmos technology
publishDate 2013
url https://hdl.handle.net/10356/98711
http://hdl.handle.net/10220/12682
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