Effects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stability

• Main Authors: Lee, In-Yeal, Shin, Jeong-hun, Choi, Daebeom, Baek, Jung Woo, Heo, Jonggon, Park, Wonkyu, Leem, Jung Woo, Yu, Jae Su, Jung, Woo-Shik, Saraswat, Krishna, Park, Jin-Hong, Shim, Jaewoo
• Other Authors: School of Mechanical and Aerospace Engineering
• Format: Article
• Published: 2013
• Online Access: https://hdl.handle.net/10356/98847; http://hdl.handle.net/10220/13441
• Institution: Nanyang Technological University

In this work, the effect of Ge point defect healing process between 550 °C and 650 °C is investigated, in the aspect of leakage (off) current and junction depth of Ge n+/p junction diodes using ECV, TEM, J-V, and SIMS analyses. After 600 °C anneal, off-current density (2 × 10−4 A/cm2) is dramaticall...