The shuttle nanoelectromechanical nonvolatile memory

• المؤلفون الرئيسيون: Pott, Vincent, Chua, Geng Li, Vaddi, Ramesh, Tsai, Julius Ming-Lin, Kim, Tony Tae-Hyoung
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/99090; http://hdl.handle.net/10220/13480
• المؤسسة: Nanyang Technological University

Nonvolatile memory (NVM) devices based on storage layers, p-n junctions and transistors, such as FLASH, suffer from poor retention at high temperature, high voltage writing, and wear out while cycling. This paper presents the structure, operation, and modeling of a nanoelectromechanical NVM based on...