A cantilever-based NEM nonvolatile memory utilizing electrostatic actuation and vibrational deactuation for high-temperature operation

This paper proposes a cantilever-based nanoelectromechanical (NEM) nonvolatile memory (NVM) with a novel write scheme for reliable memory operation at very high-operating temperature (up to 300 °C) in rugged electronics. The memory bit (0/1) is formed by the opening/closing of a cantilever beam. Per...

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Main Authors: Gopal, Jayaraman Karthik, Do, Anh Tuan, Singh, Pushpapraj, Chua, Geng Li, Kim, Tony Tae-Hyoung
其他作者: School of Electrical and Electronic Engineering
格式: Article
語言:English
出版: 2015
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在線閱讀:https://hdl.handle.net/10356/79383
http://hdl.handle.net/10220/26027
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機構: Nanyang Technological University
語言: English