A cantilever-based NEM nonvolatile memory utilizing electrostatic actuation and vibrational deactuation for high-temperature operation

This paper proposes a cantilever-based nanoelectromechanical (NEM) nonvolatile memory (NVM) with a novel write scheme for reliable memory operation at very high-operating temperature (up to 300 °C) in rugged electronics. The memory bit (0/1) is formed by the opening/closing of a cantilever beam. Per...

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Main Authors: Gopal, Jayaraman Karthik, Do, Anh Tuan, Singh, Pushpapraj, Chua, Geng Li, Kim, Tony Tae-Hyoung
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2015
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Online Access:https://hdl.handle.net/10356/79383
http://hdl.handle.net/10220/26027
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-793832020-03-07T13:57:23Z A cantilever-based NEM nonvolatile memory utilizing electrostatic actuation and vibrational deactuation for high-temperature operation Gopal, Jayaraman Karthik Do, Anh Tuan Singh, Pushpapraj Chua, Geng Li Kim, Tony Tae-Hyoung School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering This paper proposes a cantilever-based nanoelectromechanical (NEM) nonvolatile memory (NVM) with a novel write scheme for reliable memory operation at very high-operating temperature (up to 300 °C) in rugged electronics. The memory bit (0/1) is formed by the opening/closing of a cantilever beam. Permanent retention is obtained by adhesive force between two smooth surfaces in contact, eliminating leakage observed in all types of storage-layer-based NVMs. This allows the proposed NEM memory structure to be implemented using a simple bilayer design and easily integrated with the CMOS platform with leakage of 144 pA, which is significantly less compared with SRAM. The experimental analysis of vibrational reset is reported for the first time in this paper. An array structure using the proposed NEM memory device and CMOS devices is presented. Each bit cell consists of one NEM memory device and one nMOS transistor for realizing full random-access operation. Accepted version 2015-06-23T06:56:21Z 2019-12-06T13:24:00Z 2015-06-23T06:56:21Z 2019-12-06T13:24:00Z 2014 2014 Journal Article Gopal, J. K., Do, A. T., Singh, P., Chua, G. L., & Kim, T. T.-H. (2014). A cantilever-based NEM nonvolatile memory utilizing electrostatic actuation and vibrational deactuation for high-temperature operation. IEEE Transactions on Electron Devices, 61(6), 2177-2185. https://hdl.handle.net/10356/79383 http://hdl.handle.net/10220/26027 10.1109/TED.2014.2317808 en IEEE Transactions on Electron Devices © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/TED.2014.2317808]. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Gopal, Jayaraman Karthik
Do, Anh Tuan
Singh, Pushpapraj
Chua, Geng Li
Kim, Tony Tae-Hyoung
A cantilever-based NEM nonvolatile memory utilizing electrostatic actuation and vibrational deactuation for high-temperature operation
description This paper proposes a cantilever-based nanoelectromechanical (NEM) nonvolatile memory (NVM) with a novel write scheme for reliable memory operation at very high-operating temperature (up to 300 °C) in rugged electronics. The memory bit (0/1) is formed by the opening/closing of a cantilever beam. Permanent retention is obtained by adhesive force between two smooth surfaces in contact, eliminating leakage observed in all types of storage-layer-based NVMs. This allows the proposed NEM memory structure to be implemented using a simple bilayer design and easily integrated with the CMOS platform with leakage of 144 pA, which is significantly less compared with SRAM. The experimental analysis of vibrational reset is reported for the first time in this paper. An array structure using the proposed NEM memory device and CMOS devices is presented. Each bit cell consists of one NEM memory device and one nMOS transistor for realizing full random-access operation.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Gopal, Jayaraman Karthik
Do, Anh Tuan
Singh, Pushpapraj
Chua, Geng Li
Kim, Tony Tae-Hyoung
format Article
author Gopal, Jayaraman Karthik
Do, Anh Tuan
Singh, Pushpapraj
Chua, Geng Li
Kim, Tony Tae-Hyoung
author_sort Gopal, Jayaraman Karthik
title A cantilever-based NEM nonvolatile memory utilizing electrostatic actuation and vibrational deactuation for high-temperature operation
title_short A cantilever-based NEM nonvolatile memory utilizing electrostatic actuation and vibrational deactuation for high-temperature operation
title_full A cantilever-based NEM nonvolatile memory utilizing electrostatic actuation and vibrational deactuation for high-temperature operation
title_fullStr A cantilever-based NEM nonvolatile memory utilizing electrostatic actuation and vibrational deactuation for high-temperature operation
title_full_unstemmed A cantilever-based NEM nonvolatile memory utilizing electrostatic actuation and vibrational deactuation for high-temperature operation
title_sort cantilever-based nem nonvolatile memory utilizing electrostatic actuation and vibrational deactuation for high-temperature operation
publishDate 2015
url https://hdl.handle.net/10356/79383
http://hdl.handle.net/10220/26027
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