A cantilever-based NEM nonvolatile memory utilizing electrostatic actuation and vibrational deactuation for high-temperature operation
This paper proposes a cantilever-based nanoelectromechanical (NEM) nonvolatile memory (NVM) with a novel write scheme for reliable memory operation at very high-operating temperature (up to 300 °C) in rugged electronics. The memory bit (0/1) is formed by the opening/closing of a cantilever beam. Per...
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| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2015
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/79383 http://hdl.handle.net/10220/26027 |
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| Institution: | Nanyang Technological University |
| Language: | English |