Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications

Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications

10.1021/nn800808s

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Bibliographic Details
Main Authors: Liao, L., Fan, H.J., Yan, B., Zhang, Z., Chen, L.L., Li, B.S., Xing, G.Z., Shen, Z.X., Wu, T., Sun, X.W., Wang, J., Yu, T.
Other Authors: MATERIALS SCIENCE AND ENGINEERING
Format: Article
Published: 2014
Subjects:
Depletion
Ferroelectric
Field effect transistor
Nanowires
Nonvolatile memory
PZT
ZnO
Online Access:http://scholarbank.nus.edu.sg/handle/10635/86341
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/86341

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