Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications

10.1021/nn800808s

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Bibliographic Details
Main Authors:	Liao, L., Fan, H.J., Yan, B., Zhang, Z., Chen, L.L., Li, B.S., Xing, G.Z., Shen, Z.X., Wu, T., Sun, X.W., Wang, J., Yu, T.
Other Authors:	MATERIALS SCIENCE AND ENGINEERING
Format:	Article
Published:	2014
Subjects:	Depletion Ferroelectric Field effect transistor Nanowires Nonvolatile memory PZT ZnO
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/86341
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-86341
record_format	dspace
spelling	sg-nus-scholar.10635-863412023-10-30T22:56:34Z Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications Liao, L. Fan, H.J. Yan, B. Zhang, Z. Chen, L.L. Li, B.S. Xing, G.Z. Shen, Z.X. Wu, T. Sun, X.W. Wang, J. Yu, T. MATERIALS SCIENCE AND ENGINEERING PHYSICS Depletion Ferroelectric Field effect transistor Nanowires Nonvolatile memory PZT ZnO 10.1021/nn800808s ACS Nano 3 3 700-706 2014-10-07T09:49:33Z 2014-10-07T09:49:33Z 2009-03-24 Article Liao, L., Fan, H.J., Yan, B., Zhang, Z., Chen, L.L., Li, B.S., Xing, G.Z., Shen, Z.X., Wu, T., Sun, X.W., Wang, J., Yu, T. (2009-03-24). Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications. ACS Nano 3 (3) : 700-706. ScholarBank@NUS Repository. https://doi.org/10.1021/nn800808s 19360851 http://scholarbank.nus.edu.sg/handle/10635/86341 000264535200030 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Depletion Ferroelectric Field effect transistor Nanowires Nonvolatile memory PZT ZnO
spellingShingle	Depletion Ferroelectric Field effect transistor Nanowires Nonvolatile memory PZT ZnO Liao, L. Fan, H.J. Yan, B. Zhang, Z. Chen, L.L. Li, B.S. Xing, G.Z. Shen, Z.X. Wu, T. Sun, X.W. Wang, J. Yu, T. Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications
description	10.1021/nn800808s
author2	MATERIALS SCIENCE AND ENGINEERING
author_facet	MATERIALS SCIENCE AND ENGINEERING Liao, L. Fan, H.J. Yan, B. Zhang, Z. Chen, L.L. Li, B.S. Xing, G.Z. Shen, Z.X. Wu, T. Sun, X.W. Wang, J. Yu, T.
format	Article
author	Liao, L. Fan, H.J. Yan, B. Zhang, Z. Chen, L.L. Li, B.S. Xing, G.Z. Shen, Z.X. Wu, T. Sun, X.W. Wang, J. Yu, T.
author_sort	Liao, L.
title	Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications
title_short	Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications
title_full	Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications
title_fullStr	Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications
title_full_unstemmed	Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications
title_sort	ferroelectric transistors with nanowire channel: toward nonvolatile memory applications
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/86341
_version_	1781784861806166016

Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications

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