Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications

• Main Authors: Liao, L., Fan, H.J., Yan, B., Zhang, Z., Chen, L.L., Li, B.S., Xing, G.Z., Shen, Z.X., Wu, T., Sun, X.W., Wang, J., Yu, T.
• Other Authors: MATERIALS SCIENCE AND ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Depletion; Ferroelectric; Field effect transistor; Nanowires; Nonvolatile memory; PZT; ZnO
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/86341
• Institution: National University of Singapore

10.1021/nn800808s