An 8mW ultra low power 60GHz direct-conversion receiver with 55dB gain and 4.9dB noise figure in 65nm CMOS

An ultra low power direct-conversion receiver is demonstrated for V-band 60GHz applications in 65nm CMOS process. The power consumption is significantly reduced by the design of low-power low noise amplifier (LNA), transconductance mixer and variable gain amplifier (VGA). A compact quadrature-hybrid...

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Main Authors: Shang, Yang, Cai, Deyun, Fei, Wei, Yu, Hao, Ren, Junyan
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/99096
http://hdl.handle.net/10220/12696
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-990962020-03-07T13:24:49Z An 8mW ultra low power 60GHz direct-conversion receiver with 55dB gain and 4.9dB noise figure in 65nm CMOS Shang, Yang Cai, Deyun Fei, Wei Yu, Hao Ren, Junyan School of Electrical and Electronic Engineering IEEE International Symposium on Radio-Frequency Integration Technology (2012 : Singapore) DRNTU::Engineering::Electrical and electronic engineering An ultra low power direct-conversion receiver is demonstrated for V-band 60GHz applications in 65nm CMOS process. The power consumption is significantly reduced by the design of low-power low noise amplifier (LNA), transconductance mixer and variable gain amplifier (VGA). A compact quadrature-hybrid coupler is developed for transconductance mixer for the reduction of both power and area. The proposed receiver (0.34mm2 chip area) is measured with 8mW power, the minimum single-side-band (SSB) noise figure (NF) of 4.9dB, and the maximum power conversion gain of 55dB. Accepted version 2013-08-01T01:52:13Z 2019-12-06T20:03:20Z 2013-08-01T01:52:13Z 2019-12-06T20:03:20Z 2012 2012 Conference Paper Shang, Y., Cai, D., Fei, W., Yu, H., & Ren, J. (2012). An 8mW ultra low power 60GHz direct-conversion receiver with 55dB gain and 4.9dB noise figure in 65nm CMOS. 2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 47-49. https://hdl.handle.net/10356/99096 http://hdl.handle.net/10220/12696 10.1109/RFIT.2012.6401609 en © 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/RFIT.2012.6401609]. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Shang, Yang
Cai, Deyun
Fei, Wei
Yu, Hao
Ren, Junyan
An 8mW ultra low power 60GHz direct-conversion receiver with 55dB gain and 4.9dB noise figure in 65nm CMOS
description An ultra low power direct-conversion receiver is demonstrated for V-band 60GHz applications in 65nm CMOS process. The power consumption is significantly reduced by the design of low-power low noise amplifier (LNA), transconductance mixer and variable gain amplifier (VGA). A compact quadrature-hybrid coupler is developed for transconductance mixer for the reduction of both power and area. The proposed receiver (0.34mm2 chip area) is measured with 8mW power, the minimum single-side-band (SSB) noise figure (NF) of 4.9dB, and the maximum power conversion gain of 55dB.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Shang, Yang
Cai, Deyun
Fei, Wei
Yu, Hao
Ren, Junyan
format Conference or Workshop Item
author Shang, Yang
Cai, Deyun
Fei, Wei
Yu, Hao
Ren, Junyan
author_sort Shang, Yang
title An 8mW ultra low power 60GHz direct-conversion receiver with 55dB gain and 4.9dB noise figure in 65nm CMOS
title_short An 8mW ultra low power 60GHz direct-conversion receiver with 55dB gain and 4.9dB noise figure in 65nm CMOS
title_full An 8mW ultra low power 60GHz direct-conversion receiver with 55dB gain and 4.9dB noise figure in 65nm CMOS
title_fullStr An 8mW ultra low power 60GHz direct-conversion receiver with 55dB gain and 4.9dB noise figure in 65nm CMOS
title_full_unstemmed An 8mW ultra low power 60GHz direct-conversion receiver with 55dB gain and 4.9dB noise figure in 65nm CMOS
title_sort 8mw ultra low power 60ghz direct-conversion receiver with 55db gain and 4.9db noise figure in 65nm cmos
publishDate 2013
url https://hdl.handle.net/10356/99096
http://hdl.handle.net/10220/12696
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