Augmented one dimensional nanostructured sensor elements
This paper illustrates the novel approaches to augment the sensing behavior of In2O3 base nanowires towards pollutant gases using nanowire field effect transistors (NWFETs). One of the approaches is based on the method of doping. Zn-doping increases the oxygen vacancies which enhance the oxygen ion...
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| Main Authors: | , |
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| Other Authors: | |
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/99109 http://hdl.handle.net/10220/12886 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | This paper illustrates the novel approaches to augment the sensing behavior of In2O3 base nanowires towards pollutant gases using nanowire field effect transistors (NWFETs). One of the approaches is based on the method of doping. Zn-doping increases the oxygen vacancies which enhance the oxygen ion adsorption on the nanowire surface. The resultant indium zinc oxide (IZO) nanowires show a good selectivity of CO gas over NO and NO2 gas at room temperature sensing tests. Surface functionalization of the In 2O3 through self-assembled monolayers can also be used to improve the sensing responses in NWFET. The metal-semiconductor interfaces with nanoscopic depletion regions create nano-Schottky barriers modulation due to the differences in work function and enhance the device conductance. |
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