Augmented one dimensional nanostructured sensor elements

This paper illustrates the novel approaches to augment the sensing behavior of In2O3 base nanowires towards pollutant gases using nanowire field effect transistors (NWFETs). One of the approaches is based on the method of doping. Zn-doping increases the oxygen vacancies which enhance the oxygen ion...

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Main Authors: Lee, Pooi See, Singh, Nandan
Other Authors: School of Materials Science & Engineering
Format: Conference or Workshop Item
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/99109
http://hdl.handle.net/10220/12886
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-991092020-06-01T10:01:34Z Augmented one dimensional nanostructured sensor elements Lee, Pooi See Singh, Nandan School of Materials Science & Engineering Sensors (2012 : Taipei, Taiwan) This paper illustrates the novel approaches to augment the sensing behavior of In2O3 base nanowires towards pollutant gases using nanowire field effect transistors (NWFETs). One of the approaches is based on the method of doping. Zn-doping increases the oxygen vacancies which enhance the oxygen ion adsorption on the nanowire surface. The resultant indium zinc oxide (IZO) nanowires show a good selectivity of CO gas over NO and NO2 gas at room temperature sensing tests. Surface functionalization of the In 2O3 through self-assembled monolayers can also be used to improve the sensing responses in NWFET. The metal-semiconductor interfaces with nanoscopic depletion regions create nano-Schottky barriers modulation due to the differences in work function and enhance the device conductance. 2013-08-02T04:33:42Z 2019-12-06T20:03:29Z 2013-08-02T04:33:42Z 2019-12-06T20:03:29Z 2012 2012 Conference Paper https://hdl.handle.net/10356/99109 http://hdl.handle.net/10220/12886 10.1109/ICSENS.2012.6411431 en
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
description This paper illustrates the novel approaches to augment the sensing behavior of In2O3 base nanowires towards pollutant gases using nanowire field effect transistors (NWFETs). One of the approaches is based on the method of doping. Zn-doping increases the oxygen vacancies which enhance the oxygen ion adsorption on the nanowire surface. The resultant indium zinc oxide (IZO) nanowires show a good selectivity of CO gas over NO and NO2 gas at room temperature sensing tests. Surface functionalization of the In 2O3 through self-assembled monolayers can also be used to improve the sensing responses in NWFET. The metal-semiconductor interfaces with nanoscopic depletion regions create nano-Schottky barriers modulation due to the differences in work function and enhance the device conductance.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Lee, Pooi See
Singh, Nandan
format Conference or Workshop Item
author Lee, Pooi See
Singh, Nandan
spellingShingle Lee, Pooi See
Singh, Nandan
Augmented one dimensional nanostructured sensor elements
author_sort Lee, Pooi See
title Augmented one dimensional nanostructured sensor elements
title_short Augmented one dimensional nanostructured sensor elements
title_full Augmented one dimensional nanostructured sensor elements
title_fullStr Augmented one dimensional nanostructured sensor elements
title_full_unstemmed Augmented one dimensional nanostructured sensor elements
title_sort augmented one dimensional nanostructured sensor elements
publishDate 2013
url https://hdl.handle.net/10356/99109
http://hdl.handle.net/10220/12886
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