Augmented one dimensional nanostructured sensor elements
This paper illustrates the novel approaches to augment the sensing behavior of In2O3 base nanowires towards pollutant gases using nanowire field effect transistors (NWFETs). One of the approaches is based on the method of doping. Zn-doping increases the oxygen vacancies which enhance the oxygen ion...
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sg-ntu-dr.10356-991092020-06-01T10:01:34Z Augmented one dimensional nanostructured sensor elements Lee, Pooi See Singh, Nandan School of Materials Science & Engineering Sensors (2012 : Taipei, Taiwan) This paper illustrates the novel approaches to augment the sensing behavior of In2O3 base nanowires towards pollutant gases using nanowire field effect transistors (NWFETs). One of the approaches is based on the method of doping. Zn-doping increases the oxygen vacancies which enhance the oxygen ion adsorption on the nanowire surface. The resultant indium zinc oxide (IZO) nanowires show a good selectivity of CO gas over NO and NO2 gas at room temperature sensing tests. Surface functionalization of the In 2O3 through self-assembled monolayers can also be used to improve the sensing responses in NWFET. The metal-semiconductor interfaces with nanoscopic depletion regions create nano-Schottky barriers modulation due to the differences in work function and enhance the device conductance. 2013-08-02T04:33:42Z 2019-12-06T20:03:29Z 2013-08-02T04:33:42Z 2019-12-06T20:03:29Z 2012 2012 Conference Paper https://hdl.handle.net/10356/99109 http://hdl.handle.net/10220/12886 10.1109/ICSENS.2012.6411431 en |
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This paper illustrates the novel approaches to augment the sensing behavior of In2O3 base nanowires towards pollutant gases using nanowire field effect transistors (NWFETs). One of the approaches is based on the method of doping. Zn-doping increases the oxygen vacancies which enhance the oxygen ion adsorption on the nanowire surface. The resultant indium zinc oxide (IZO) nanowires show a good selectivity of CO gas over NO and NO2 gas at room temperature sensing tests. Surface functionalization of the In 2O3 through self-assembled monolayers can also be used to improve the sensing responses in NWFET. The metal-semiconductor interfaces with nanoscopic depletion regions create nano-Schottky barriers modulation due to the differences in work function and enhance the device conductance. |
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School of Materials Science & Engineering |
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School of Materials Science & Engineering Lee, Pooi See Singh, Nandan |
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Lee, Pooi See Singh, Nandan |
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Lee, Pooi See Singh, Nandan Augmented one dimensional nanostructured sensor elements |
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Lee, Pooi See |
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Augmented one dimensional nanostructured sensor elements |
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Augmented one dimensional nanostructured sensor elements |
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Augmented one dimensional nanostructured sensor elements |
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Augmented one dimensional nanostructured sensor elements |
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Augmented one dimensional nanostructured sensor elements |
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augmented one dimensional nanostructured sensor elements |
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2013 |
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https://hdl.handle.net/10356/99109 http://hdl.handle.net/10220/12886 |
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