Carbon nanowires fabrications via top down approach

Carbon nanowires are fabricated by the Langmuir Blodgett (LB) method via the top down approach on amorphous carbon. Thick a-C films (500 nm to 1 μm) have been successfully deposited after the treatment on silicon. The anisotropic etching of carbon using reactive ion etching (RIE) has been verified g...

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Main Authors: Tan, Chong Wei, Tay, Beng Kang
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/99227
http://hdl.handle.net/10220/13710
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-992272020-03-07T13:57:27Z Carbon nanowires fabrications via top down approach Tan, Chong Wei Tay, Beng Kang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Carbon nanowires are fabricated by the Langmuir Blodgett (LB) method via the top down approach on amorphous carbon. Thick a-C films (500 nm to 1 μm) have been successfully deposited after the treatment on silicon. The anisotropic etching of carbon using reactive ion etching (RIE) has been verified giving near vertical sidewalls. The LB method for depositing monolayer requires a hydrophilic surface. Plasma treatment is being performed on the silicon oxide hard mask to reduce the surface energy thereby making the surface from hydrophobic to hydrophilic. PS balls which are being deposited by LB method have one disadvantage which is the low adhesion of the PS ball to the silicon oxide surface. This adhesion is being improved by subjecting the PS ball to annealing which changes the shape and increase the contact area between the PS balls and the silicon oxide surface. As carbon and PS ball is vulnerable to oxygen plasma, a modified recipe of CF4:Ar was being used to etch the silicon oxide hard mask. There is almost little chemical reaction of the CF4 on carbon and PS ball. Carbon nanowires were successfully fabricated using polystyrene (PS) balls of diameter 450 nm. Through a series of steps, carbon nanowire of 500 nm in length and diameter approximately 250 nm can be produced. 2013-09-30T02:30:50Z 2019-12-06T20:04:52Z 2013-09-30T02:30:50Z 2019-12-06T20:04:52Z 2012 2012 Journal Article Tan, C. W., & Tay, B. K. (2012). Carbon nanowires fabrications via top down approach. Journal of nanoscience and nanotechnology, 12(1), 707-713. https://hdl.handle.net/10356/99227 http://hdl.handle.net/10220/13710 10.1166/jnn.2012.5399 en Journal of nanoscience and nanotechnology
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Tan, Chong Wei
Tay, Beng Kang
Carbon nanowires fabrications via top down approach
description Carbon nanowires are fabricated by the Langmuir Blodgett (LB) method via the top down approach on amorphous carbon. Thick a-C films (500 nm to 1 μm) have been successfully deposited after the treatment on silicon. The anisotropic etching of carbon using reactive ion etching (RIE) has been verified giving near vertical sidewalls. The LB method for depositing monolayer requires a hydrophilic surface. Plasma treatment is being performed on the silicon oxide hard mask to reduce the surface energy thereby making the surface from hydrophobic to hydrophilic. PS balls which are being deposited by LB method have one disadvantage which is the low adhesion of the PS ball to the silicon oxide surface. This adhesion is being improved by subjecting the PS ball to annealing which changes the shape and increase the contact area between the PS balls and the silicon oxide surface. As carbon and PS ball is vulnerable to oxygen plasma, a modified recipe of CF4:Ar was being used to etch the silicon oxide hard mask. There is almost little chemical reaction of the CF4 on carbon and PS ball. Carbon nanowires were successfully fabricated using polystyrene (PS) balls of diameter 450 nm. Through a series of steps, carbon nanowire of 500 nm in length and diameter approximately 250 nm can be produced.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Tan, Chong Wei
Tay, Beng Kang
format Article
author Tan, Chong Wei
Tay, Beng Kang
author_sort Tan, Chong Wei
title Carbon nanowires fabrications via top down approach
title_short Carbon nanowires fabrications via top down approach
title_full Carbon nanowires fabrications via top down approach
title_fullStr Carbon nanowires fabrications via top down approach
title_full_unstemmed Carbon nanowires fabrications via top down approach
title_sort carbon nanowires fabrications via top down approach
publishDate 2013
url https://hdl.handle.net/10356/99227
http://hdl.handle.net/10220/13710
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