Solid source growth of Si oxide nanowires promoted by carbon nanotubes

• Main Authors: Lu, Congxiang, Liu, Wen-wen, Tan, Chong Wei, Tay, Beng Kang, Coquet, Philippe, Wang, Xingli, Li, Xiaocheng
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2014
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Applications of electronics
• 在線閱讀: https://hdl.handle.net/10356/103625; http://hdl.handle.net/10220/24540
• 機構: Nanyang Technological University

We report a method to promote solid source growth of Si oxide nanowires (SiONWs) by using an array of vertically aligned carbon nanotubes (CNTs). It starts with the fabrication of CNT array by plasma enhanced chemical vapor deposition (PECVD) on Si wafers, followed by growth of SiONWs. Herein, CNTs...