Solid source growth of Si oxide nanowires promoted by carbon nanotubes

Solid source growth of Si oxide nanowires promoted by carbon nanotubes

We report a method to promote solid source growth of Si oxide nanowires (SiONWs) by using an array of vertically aligned carbon nanotubes (CNTs). It starts with the fabrication of CNT array by plasma enhanced chemical vapor deposition (PECVD) on Si wafers, followed by growth of SiONWs. Herein, CNTs...

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Bibliographic Details
Main Authors: Lu, Congxiang, Liu, Wen-wen, Tan, Chong Wei, Tay, Beng Kang, Coquet, Philippe, Wang, Xingli, Li, Xiaocheng
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Applications of electronics
Online Access:https://hdl.handle.net/10356/103625
http://hdl.handle.net/10220/24540
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Institution: Nanyang Technological University
Language: English
Description
Summary:We report a method to promote solid source growth of Si oxide nanowires (SiONWs) by using an array of vertically aligned carbon nanotubes (CNTs). It starts with the fabrication of CNT array by plasma enhanced chemical vapor deposition (PECVD) on Si wafers, followed by growth of SiONWs. Herein, CNTs serve as a scaffold, which helps the dispersion of catalysts for SiONWs and also provides space for hydrogen which boosts the diffusion of Si atoms and hence formation of SiONWs. As the result, a three dimensional (3D) hybrid network of densely packed SiONWs and CNTs can be produced rapidly.

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