Solid source growth of Si oxide nanowires promoted by carbon nanotubes

• المؤلفون الرئيسيون: Lu, Congxiang, Liu, Wen-wen, Tan, Chong Wei, Tay, Beng Kang, Coquet, Philippe, Wang, Xingli, Li, Xiaocheng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Applications of electronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/103625; http://hdl.handle.net/10220/24540
• المؤسسة: Nanyang Technological University

We report a method to promote solid source growth of Si oxide nanowires (SiONWs) by using an array of vertically aligned carbon nanotubes (CNTs). It starts with the fabrication of CNT array by plasma enhanced chemical vapor deposition (PECVD) on Si wafers, followed by growth of SiONWs. Herein, CNTs...