Laser annealing of oxide capped Si/Ni nanowire

• المؤلف الرئيسي: Lin, Juncheng.
• مؤلفون آخرون: Pey Kin Leong
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2009
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/17824
• المؤسسة: Nanyang Technological University

Laser annealing of semiconductor nanowires has opened new possibilities for crystal growth, alloying and novel structure in the rapid miniaturization of microelectronics. The use of laser processing techniques offers a unique control of the heat flow into the material. Different beam delivery system...