Laser annealing of oxide capped Si/Ni nanowire

Laser annealing of semiconductor nanowires has opened new possibilities for crystal growth, alloying and novel structure in the rapid miniaturization of microelectronics. The use of laser processing techniques offers a unique control of the heat flow into the material. Different beam delivery system...

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Main Author: Lin, Juncheng.
Other Authors: Pey Kin Leong
Format: Final Year Project
Language:English
Published: 2009
Subjects:
Online Access:http://hdl.handle.net/10356/17824
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-178242023-07-07T17:42:52Z Laser annealing of oxide capped Si/Ni nanowire Lin, Juncheng. Pey Kin Leong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Laser annealing of semiconductor nanowires has opened new possibilities for crystal growth, alloying and novel structure in the rapid miniaturization of microelectronics. The use of laser processing techniques offers a unique control of the heat flow into the material. Different beam delivery systems can be used to achieve a desired beam shape and laser fluence profile, which significantly influence the resulting microstructure of the material. In this thesis, excimer laser annealing (ELA) process is performed to achieve nickel silicide formation on silicon nanowire (SiNW). ELA is used for the activation of silicide formation as it can provide ultrafast annealing with a very limited thermal energy that is just enough to form silicide. However, in Ni-Si phase system, the phase formation is rather complex as it is depended on process parameters and substrate variations. It is observed that the phase NiSi has relatively low melting point (990°C) and low-resistivity (14µΩ-cm) which is desired to achieve in this experiment. The experiment is carried out on several samples with two different amount of Ni coated on them. All the samples are capped with a layer of oxide which may act as an addition heat entrapment centre for the NWs. Following on, they are annealed at different laser fluence level and number of pulses to find out the best condition to achieve Ni/Si nanowires with better electrical properties. The surface structures of annealed samples are analyzed using Scanning Electron Microscope (SEM) and Field Emission Scanning Electron Microscope (FESEM). Finally, the I-V characteristic for the annealed NWs is measured using four-pin probe station, and the resistance of the NWs will be determined. Bachelor of Engineering 2009-06-15T03:35:57Z 2009-06-15T03:35:57Z 2009 2009 Final Year Project (FYP) http://hdl.handle.net/10356/17824 en Nanyang Technological University 72 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Lin, Juncheng.
Laser annealing of oxide capped Si/Ni nanowire
description Laser annealing of semiconductor nanowires has opened new possibilities for crystal growth, alloying and novel structure in the rapid miniaturization of microelectronics. The use of laser processing techniques offers a unique control of the heat flow into the material. Different beam delivery systems can be used to achieve a desired beam shape and laser fluence profile, which significantly influence the resulting microstructure of the material. In this thesis, excimer laser annealing (ELA) process is performed to achieve nickel silicide formation on silicon nanowire (SiNW). ELA is used for the activation of silicide formation as it can provide ultrafast annealing with a very limited thermal energy that is just enough to form silicide. However, in Ni-Si phase system, the phase formation is rather complex as it is depended on process parameters and substrate variations. It is observed that the phase NiSi has relatively low melting point (990°C) and low-resistivity (14µΩ-cm) which is desired to achieve in this experiment. The experiment is carried out on several samples with two different amount of Ni coated on them. All the samples are capped with a layer of oxide which may act as an addition heat entrapment centre for the NWs. Following on, they are annealed at different laser fluence level and number of pulses to find out the best condition to achieve Ni/Si nanowires with better electrical properties. The surface structures of annealed samples are analyzed using Scanning Electron Microscope (SEM) and Field Emission Scanning Electron Microscope (FESEM). Finally, the I-V characteristic for the annealed NWs is measured using four-pin probe station, and the resistance of the NWs will be determined.
author2 Pey Kin Leong
author_facet Pey Kin Leong
Lin, Juncheng.
format Final Year Project
author Lin, Juncheng.
author_sort Lin, Juncheng.
title Laser annealing of oxide capped Si/Ni nanowire
title_short Laser annealing of oxide capped Si/Ni nanowire
title_full Laser annealing of oxide capped Si/Ni nanowire
title_fullStr Laser annealing of oxide capped Si/Ni nanowire
title_full_unstemmed Laser annealing of oxide capped Si/Ni nanowire
title_sort laser annealing of oxide capped si/ni nanowire
publishDate 2009
url http://hdl.handle.net/10356/17824
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