Interaction between graphene and the surface of SiO2
The interaction between graphene and a SiO2 surface has been analyzed with first-principles DFT calculations by constructing the different configurations based on α-quartz and cristobalite structures. The fact that single-layer graphene can stay stably on a SiO2 surface is explained based on a gener...
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2013
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sg-ntu-dr.10356-992412020-03-07T12:31:32Z Interaction between graphene and the surface of SiO2 Chihaia, Viorel Shen, Zexiang Kuo, Jer-Lai Fan, X. F. Zheng, W. T. School of Physical and Mathematical Sciences The interaction between graphene and a SiO2 surface has been analyzed with first-principles DFT calculations by constructing the different configurations based on α-quartz and cristobalite structures. The fact that single-layer graphene can stay stably on a SiO2 surface is explained based on a general consideration of the configuration structures of the SiO2 surface. It is found that the oxygen defect in a SiO2 surface can shift the Fermi level of graphene down which opens up the mechanism of the hole-doping effect of graphene adsorbed on a SiO2 surface observed in a lot of experiments. 2013-11-05T04:38:18Z 2019-12-06T20:04:59Z 2013-11-05T04:38:18Z 2019-12-06T20:04:59Z 2012 2012 Journal Article Fan, X. F., Zheng, W. T., Chihaia, V., Shen, Z., & Kuo, J.-L. (2012). Interaction between graphene and the surface of SiO2 . Journal of physics : condensed matter, 24(30), 305004. https://hdl.handle.net/10356/99241 http://hdl.handle.net/10220/17247 10.1088/0953-8984/24/30/305004 en Journal of physics : condensed matter |
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The interaction between graphene and a SiO2 surface has been analyzed with first-principles DFT calculations by constructing the different configurations based on α-quartz and cristobalite structures. The fact that single-layer graphene can stay stably on a SiO2 surface is explained based on a general consideration of the configuration structures of the SiO2 surface. It is found that the oxygen defect in a SiO2 surface can shift the Fermi level of graphene down which opens up the mechanism of the hole-doping effect of graphene adsorbed on a SiO2 surface observed in a lot of experiments. |
| author2 |
School of Physical and Mathematical Sciences |
| author_facet |
School of Physical and Mathematical Sciences Chihaia, Viorel Shen, Zexiang Kuo, Jer-Lai Fan, X. F. Zheng, W. T. |
| format |
Article |
| author |
Chihaia, Viorel Shen, Zexiang Kuo, Jer-Lai Fan, X. F. Zheng, W. T. |
| spellingShingle |
Chihaia, Viorel Shen, Zexiang Kuo, Jer-Lai Fan, X. F. Zheng, W. T. Interaction between graphene and the surface of SiO2 |
| author_sort |
Chihaia, Viorel |
| title |
Interaction between graphene and the surface of SiO2 |
| title_short |
Interaction between graphene and the surface of SiO2 |
| title_full |
Interaction between graphene and the surface of SiO2 |
| title_fullStr |
Interaction between graphene and the surface of SiO2 |
| title_full_unstemmed |
Interaction between graphene and the surface of SiO2 |
| title_sort |
interaction between graphene and the surface of sio2 |
| publishDate |
2013 |
| url |
https://hdl.handle.net/10356/99241 http://hdl.handle.net/10220/17247 |
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1681033986784100352 |