Comparison of stress-induced voiding phenomena in copper line–via structures with different dielectric materials

• المؤلفون الرئيسيون: Hou, Yuejin, Tan, Cher Ming
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Materials::Metallic materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/99378; http://hdl.handle.net/10220/17633

The package level stress-induced voiding (SIV) test of Cu dual-damascene line–via structures is performed. Two different dielectrics, undoped silica glass (USG) and carbon doped oxide (CDO), are used in this work. After 1344 h of high temperature storage test, the resistance drift of USG interconnec...