CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor

• Main Authors: Kropelnicki, P., Muckensturm, K.-M., Mu, X. J., Randles, A. B., Cai, H., Tsai, J. M., Vogt, H., Ang, Wan Chia
• Other Authors: Lee Kong Chian School of Medicine (LKCMedicine)
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/99652; http://hdl.handle.net/10220/17741
• Institution: Nanyang Technological University

This paper describes the development of a novel ruggedized high-temperature pressure sensor operating in lateral field exited (LFE) Lamb wave mode. The comb-like structure electrodes on top of aluminum nitride (AlN) were used to generate the wave. A membrane was fabricated on SOI wafer with a 10 µm...