CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor

This paper describes the development of a novel ruggedized high-temperature pressure sensor operating in lateral field exited (LFE) Lamb wave mode. The comb-like structure electrodes on top of aluminum nitride (AlN) were used to generate the wave. A membrane was fabricated on SOI wafer with a 10 µm...

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Main Authors: Kropelnicki, P., Muckensturm, K.-M., Mu, X. J., Randles, A. B., Cai, H., Tsai, J. M., Vogt, H., Ang, Wan Chia
Other Authors: Lee Kong Chian School of Medicine (LKCMedicine)
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/99652
http://hdl.handle.net/10220/17741
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-996522020-03-07T12:57:26Z CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor Kropelnicki, P. Muckensturm, K.-M. Mu, X. J. Randles, A. B. Cai, H. Tsai, J. M. Vogt, H. Ang, Wan Chia Lee Kong Chian School of Medicine (LKCMedicine) DRNTU::Engineering::Electrical and electronic engineering This paper describes the development of a novel ruggedized high-temperature pressure sensor operating in lateral field exited (LFE) Lamb wave mode. The comb-like structure electrodes on top of aluminum nitride (AlN) were used to generate the wave. A membrane was fabricated on SOI wafer with a 10 µm thick device layer. The sensor chip was mounted on a pressure test package and pressure was applied to the backside of the membrane, with a range of 20–100 psi. The temperature coefficient of frequency (TCF) was experimentally measured in the temperature range of −50 °C to 300 °C. By using the modified Butterworth–van Dyke model, coupling coefficients and quality factor were extracted. Temperature-dependent Young's modulus of composite structure was determined using resonance frequency and sensor interdigital transducer (IDT) wavelength which is mainly dominated by an AlN layer. Absolute sensor phase noise was measured at resonance to estimate the sensor pressure and temperature sensitivity. This paper demonstrates an AlN-based pressure sensor which can operate in harsh environment such as oil and gas exploration, automobile and aeronautic applications. 2013-11-15T07:53:55Z 2019-12-06T20:09:52Z 2013-11-15T07:53:55Z 2019-12-06T20:09:52Z 2013 2013 Journal Article Kropelnicki, P., Muckensturm, K. M., Mu, X. J., Randles, A. B., Cai, H., Ang, W. C., & et al. (2013). CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor. Journal of micromechanics and microengineering, 23(8), 085018-. https://hdl.handle.net/10356/99652 http://hdl.handle.net/10220/17741 10.1088/0960-1317/23/8/085018 en Journal of micromechanics and microengineering
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Kropelnicki, P.
Muckensturm, K.-M.
Mu, X. J.
Randles, A. B.
Cai, H.
Tsai, J. M.
Vogt, H.
Ang, Wan Chia
CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor
description This paper describes the development of a novel ruggedized high-temperature pressure sensor operating in lateral field exited (LFE) Lamb wave mode. The comb-like structure electrodes on top of aluminum nitride (AlN) were used to generate the wave. A membrane was fabricated on SOI wafer with a 10 µm thick device layer. The sensor chip was mounted on a pressure test package and pressure was applied to the backside of the membrane, with a range of 20–100 psi. The temperature coefficient of frequency (TCF) was experimentally measured in the temperature range of −50 °C to 300 °C. By using the modified Butterworth–van Dyke model, coupling coefficients and quality factor were extracted. Temperature-dependent Young's modulus of composite structure was determined using resonance frequency and sensor interdigital transducer (IDT) wavelength which is mainly dominated by an AlN layer. Absolute sensor phase noise was measured at resonance to estimate the sensor pressure and temperature sensitivity. This paper demonstrates an AlN-based pressure sensor which can operate in harsh environment such as oil and gas exploration, automobile and aeronautic applications.
author2 Lee Kong Chian School of Medicine (LKCMedicine)
author_facet Lee Kong Chian School of Medicine (LKCMedicine)
Kropelnicki, P.
Muckensturm, K.-M.
Mu, X. J.
Randles, A. B.
Cai, H.
Tsai, J. M.
Vogt, H.
Ang, Wan Chia
format Article
author Kropelnicki, P.
Muckensturm, K.-M.
Mu, X. J.
Randles, A. B.
Cai, H.
Tsai, J. M.
Vogt, H.
Ang, Wan Chia
author_sort Kropelnicki, P.
title CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor
title_short CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor
title_full CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor
title_fullStr CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor
title_full_unstemmed CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor
title_sort cmos-compatible ruggedized high-temperature lamb wave pressure sensor
publishDate 2013
url https://hdl.handle.net/10356/99652
http://hdl.handle.net/10220/17741
_version_ 1681039127789699072