Ultrasensitive phototransistor based on K-enriched MoO3 single nanowires

Ultrasensitive phototransistor based on K-enriched MoO3 single nanowires

An ultrasensitive phototransistor was fabricated based on K-intercalated MoO3 single nanowire. Devices with ultrafast photoresponse rate, high responsivity, and broad spectral response range were demonstrated. Detailed analysis of the charge transport in the device revealed the coexistence of both t...

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Bibliographic Details
Main Authors: Lu, Junpeng, Sun, Cheng, Zheng, Minrui, Wang, Yinghui, Nripan, Mathews, Kan, Jeroen A. van, Mhaisalkar, Subodh Gautam, Sow, Chorng Haur
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Materials::Photonics and optoelectronics materials
Online Access:https://hdl.handle.net/10356/99942
http://hdl.handle.net/10220/17202
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Institution: Nanyang Technological University
Language: English
Description
Summary:An ultrasensitive phototransistor was fabricated based on K-intercalated MoO3 single nanowire. Devices with ultrafast photoresponse rate, high responsivity, and broad spectral response range were demonstrated. Detailed analysis of the charge transport in the device revealed the coexistence of both thermal-activation and photoactivation mechanisms. The promising results are expected to promote the potential of this material in nano/micro-scaled photoelectronic applications.

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